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S3JBHR5G

S3JBHR5G

S3JBHR5G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AA

SOT-23

S3JBHR5G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Supplier Device Package DO-214AA (SMB)
PackagingDigi-Reel®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.15V @ 3A
Operating Temperature - Junction -55°C~150°C
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 3A
Reverse Recovery Time 1.5μs
Capacitance @ Vr, F 40pF @ 4V 1MHz
RoHS StatusROHS3 Compliant
In-Stock:9608 items

Pricing & Ordering

QuantityUnit PriceExt. Price
850$0.11814$100.419

About S3JBHR5G

The S3JBHR5G from Taiwan Semiconductor Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 600V 3A DO214AA.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the S3JBHR5G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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