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S1D R3G

S1D R3G

S1D R3G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A DO214AC

SOT-23

S1D R3G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Surface MountYES
Diode Element Material SILICON
PackagingDigi-Reel®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position DUAL
Terminal FormC BEND
JESD-30 Code R-PDSO-C2
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 200V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A
Operating Temperature - Junction -55°C~175°C
Output Current-Max 1A
Voltage - DC Reverse (Vr) (Max) 200V
Current - Average Rectified (Io) 1A
Reverse Recovery Time 1.5μs
Rep Pk Reverse Voltage-Max 200V
Capacitance @ Vr, F 12pF @ 4V 1MHz
RoHS StatusROHS3 Compliant
In-Stock:54606 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About S1D R3G

The S1D R3G from Taiwan Semiconductor Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 200V 1A DO214AC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the S1D R3G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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