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RS2BAHR3G

RS2BAHR3G

RS2BAHR3G

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1.5A DO214AC

SOT-23

RS2BAHR3G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
PackagingDigi-Reel®
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 100V
Voltage - Forward (Vf) (Max) @ If 1.3V @ 1.5A
Operating Temperature - Junction -55°C~150°C
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 1.5A
Reverse Recovery Time 150ns
Capacitance @ Vr, F 50pF @ 4V 1MHz
RoHS StatusROHS3 Compliant
In-Stock:38404 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.343000$0.343
10$0.323585$3.23585
100$0.305269$30.5269
500$0.287989$143.9945
1000$0.271688$271.688

About RS2BAHR3G

The RS2BAHR3G from Taiwan Semiconductor Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 100V 1.5A DO214AC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RS2BAHR3G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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