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MMSZ5259B RHG

MMSZ5259B RHG

MMSZ5259B RHG

Taiwan Semiconductor Corporation

ZENER DIODE 80Ohm ±5% 100nA @ 30V -65°C~150°C TJ 2 Terminations SOD-123F

SOT-23

MMSZ5259B RHG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case SOD-123F
Surface MountYES
Diode Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Tolerance ±5%
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-F2
Qualification StatusNot Qualified
Number of Elements 1
Polarity UNIDIRECTIONAL
Configuration SINGLE
Power Dissipation-Max 0.5W
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 30V
Power - Max 500mW
Impedance-Max 80Ohm
Reference Voltage39V
Voltage - Zener (Nom) (Vz) 39V
Voltage Tol-Max 5%
Working Test Current 3.2mA
RoHS StatusROHS3 Compliant
In-Stock:146487 items

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MMSZ5259B RHG Product Details

MMSZ5259B RHG Overview


In order to supply this electrical device, a reverse leakage current of 100nA @ 30V is required.This value (Tol) represents the maximum voltage that can be supplied.Zener (Nom) voltage is reduced to 39V during operation.This device should be operated with 3.2mA as the working test voltage.

MMSZ5259B RHG Features


reverse leakage current of 100nA @ 30V
100nA @ 30V is the maximum voltage (Tol)
the working test voltage to 3.2mA
minimal dynamic impedance is 3.2mA


MMSZ5259B RHG Applications


There are a lot of Taiwan Semiconductor Corporation
MMSZ5259B RHG applications of zener single diodes.


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