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HS1J R3G

HS1J R3G

HS1J R3G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO214AC

SOT-23

HS1J R3G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Supplier Device Package DO-214AC (SMA)
PackagingDigi-Reel®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.7V @ 1A
Operating Temperature - Junction -55°C~150°C
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 1A
Reverse Recovery Time 75ns
Capacitance @ Vr, F 20pF @ 4V 1MHz
RoHS StatusROHS3 Compliant
In-Stock:33748 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.409000$0.409
10$0.385849$3.85849
100$0.364009$36.4009
500$0.343404$171.702
1000$0.323966$323.966

About HS1J R3G

The HS1J R3G from Taiwan Semiconductor Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 600V 1A DO214AC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the HS1J R3G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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