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HER107G A0G

HER107G A0G

HER107G A0G

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A DO204AL

SOT-23

HER107G A0G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41)
PackagingTape & Box (TB)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 800V
Voltage - Forward (Vf) (Max) @ If 1.7V @ 1A
Operating Temperature - Junction -55°C~150°C
Voltage - DC Reverse (Vr) (Max) 800V
Current - Average Rectified (Io) 1A
Reverse Recovery Time 75ns
Capacitance @ Vr, F 10pF @ 4V 1MHz
RoHS StatusROHS3 Compliant
In-Stock:53507 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.379650$0.37965
10$0.358160$3.5816
100$0.337888$33.7888
500$0.318762$159.381
1000$0.300719$300.719

About HER107G A0G

The HER107G A0G from Taiwan Semiconductor Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 800V 1A DO204AL.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the HER107G A0G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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