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ES3JBHR5G

ES3JBHR5G

ES3JBHR5G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AA

SOT-23

ES3JBHR5G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Supplier Device Package DO-214AA (SMB)
PackagingTape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.45V @ 3A
Operating Temperature - Junction -55°C~150°C
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 3A
Reverse Recovery Time 35ns
Capacitance @ Vr, F 34pF @ 4V 1MHz
RoHS StatusROHS3 Compliant
In-Stock:11421 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.668000$0.668
10$0.630189$6.30189
100$0.594518$59.4518
500$0.560866$280.433
1000$0.529119$529.119

About ES3JBHR5G

The ES3JBHR5G from Taiwan Semiconductor Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 600V 3A DO214AA.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the ES3JBHR5G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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