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BZV55B4V7 L0G

BZV55B4V7 L0G

BZV55B4V7 L0G

Taiwan Semiconductor Corporation

ZENER DIODE 60Ohm ±2% 500nA @ 1V -65°C~175°C TJ DO-213AC, MINI-MELF, SOD-80

SOT-23

BZV55B4V7 L0G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80
Operating Temperature-65°C~175°C TJ
PackagingTape & Reel (TR)
Tolerance ±2%
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code8541.10.00.50
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 500nA @ 1V
Voltage - Forward (Vf) (Max) @ If 1V @ 100mA
Power - Max 500mW
Impedance-Max 60Ohm
Voltage - Zener (Nom) (Vz) 4.7V
RoHS StatusROHS3 Compliant
In-Stock:164017 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BZV55B4V7 L0G Product Details

BZV55B4V7 L0G Overview


In order to supply this electrical device, a reverse leakage current of 500nA @ 1V is required.Zener (Nom) voltage is reduced to 4.7V during operation.1V @ 100mA is achieved when the maximum voltage - Forward (Vf) is applied for its operation.

BZV55B4V7 L0G Features


reverse leakage current of 500nA @ 1V
500nA @ 1V is the maximum voltage (Tol)


BZV55B4V7 L0G Applications


There are a lot of Taiwan Semiconductor Corporation
BZV55B4V7 L0G applications of zener single diodes.


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