Name: BZT55C8V2 L1G
Brand: Taiwan Semiconductor Corporation
SKU: BZT55C8V2 L1G
Availability: InStock

new-10%

BZT55C8V2 L1G

Manufacturer part number:BZT55C8V2 L1G

Manufacturer:Taiwan Semiconductor Corporation

Description:ZENER DIODE 7Ohm ±5% 100nA @ 6.2V -65°C~175°C TJ DO-213AC, MINI-MELF, SOD-80

Case Package:SOT-23

Datasheet:BZT55C8V2 L1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	DO-213AC, MINI-MELF, SOD-80
Surface Mount	YES
Operating Temperature	-65°C~175°C TJ
Packaging	Tape & Reel (TR)
Tolerance	±5%
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
HTS Code	8541.10.00.50
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE
Power Dissipation-Max	0.5W
Diode Type	ZENER DIODE
Current - Reverse Leakage @ Vr	100nA @ 6.2V
Voltage - Forward (Vf) (Max) @ If	1V @ 10mA
Power - Max	500mW
Impedance-Max	7Ohm
Reference Voltage	8.2V
Voltage - Zener (Nom) (Vz)	8.2V
Voltage Tol-Max	5%
Working Test Current	5mA
Dynamic Impedance-Max	7Ohm
RoHS Status	ROHS3 Compliant

BZT55C8V2 L1G Product Details

BZT55C8V2 L1G Overview

A reverse leakage current of 100nA @ 6.2V is required to supply this electrical device.Voltage (Tol) is limited to 5%.Zener (Nom)'s maximum voltage is reduced to zero during operation.To operate this device, set the working test voltage to 5mA.1V @ 10mA is reached when the maximum voltage - Forward (Vf) is supplied for its operation.