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BZT55C13 L1G

BZT55C13 L1G

BZT55C13 L1G

Taiwan Semiconductor Corporation

ZENER DIODE 26Ohm ±5% 100nA @ 10V -65°C~175°C TJ DO-213AC, MINI-MELF, SOD-80

SOT-23

BZT55C13 L1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80
Surface MountYES
Operating Temperature-65°C~175°C TJ
PackagingTape & Reel (TR)
Tolerance ±5%
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
HTS Code8541.10.00.50
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 0.5W
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 10V
Voltage - Forward (Vf) (Max) @ If 1V @ 10mA
Power - Max 500mW
Impedance-Max 26Ohm
Reference Voltage13V
Voltage - Zener (Nom) (Vz) 13V
Voltage Tol-Max 5%
Working Test Current 5mA
Dynamic Impedance-Max 26Ohm
RoHS StatusROHS3 Compliant
In-Stock:2035 items

Pricing & Ordering

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BZT55C13 L1G Product Details

BZT55C13 L1G Overview


The reverse leakage current needed to power this electric device is 100nA @ 10V.Zener single diode is a maximum voltage (Tol) that can be supplied at 5%.As part of the operation, the maximum voltage - Zener (Nom) is reduced to 13V.Setting the working test voltage to 5mA will allow this device to operate.For its operation, the maximum voltage - Forward (Vf) 1V @ 10mA is supplied.

BZT55C13 L1G Features


reverse leakage current of 100nA @ 10V
100nA @ 10V is the maximum voltage (Tol)
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT55C13 L1G Applications


There are a lot of Taiwan Semiconductor Corporation
BZT55C13 L1G applications of zener single diodes.


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