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BZT55B3V0 L1G

BZT55B3V0 L1G

BZT55B3V0 L1G

Taiwan Semiconductor Corporation

ZENER DIODE 85Ohm ±2% 4μA @ 1V -65°C~175°C TJ DO-213AC, MINI-MELF, SOD-80

SOT-23

BZT55B3V0 L1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80
Operating Temperature-65°C~175°C TJ
PackagingTape & Reel (TR)
Tolerance ±2%
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
HTS Code8541.10.00.50
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 4μA @ 1V
Voltage - Forward (Vf) (Max) @ If 1V @ 10mA
Power - Max 500mW
Impedance-Max 85Ohm
Voltage - Zener (Nom) (Vz) 3V
RoHS StatusROHS3 Compliant
In-Stock:1089 items

Pricing & Ordering

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BZT55B3V0 L1G Product Details

BZT55B3V0 L1G Overview


In order to supply this electrical device, a reverse leakage current of 4μA @ 1V is required.Zener (Nom) voltage is reduced to 3V during operation.1V @ 10mA is achieved when the maximum voltage - Forward (Vf) is applied for its operation.

BZT55B3V0 L1G Features


reverse leakage current of 4μA @ 1V
4μA @ 1V is the maximum voltage (Tol)


BZT55B3V0 L1G Applications


There are a lot of Taiwan Semiconductor Corporation
BZT55B3V0 L1G applications of zener single diodes.


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