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BZT52C8V2 RHG

BZT52C8V2 RHG

BZT52C8V2 RHG

Taiwan Semiconductor Corporation

ZENER DIODE 15Ohm ±5% 630nA @ 5V -65°C~150°C TJ 2 Terminations SOD-123F

SOT-23

BZT52C8V2 RHG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case SOD-123F
Surface MountYES
Diode Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2014
Tolerance ±5%
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-F2
Qualification StatusNot Qualified
Number of Elements 1
Polarity UNIDIRECTIONAL
Configuration SINGLE
Power Dissipation-Max 0.5W
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 630nA @ 5V
Voltage - Forward (Vf) (Max) @ If 1V @ 10mA
Power - Max 500mW
Impedance-Max 15Ohm
Reference Voltage8.2V
Voltage - Zener (Nom) (Vz) 8.2V
Voltage Tol-Max 5%
Working Test Current 5mA
RoHS StatusROHS3 Compliant
In-Stock:20956 items

Pricing & Ordering

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BZT52C8V2 RHG Product Details

BZT52C8V2 RHG Overview


A reverse leakage current of 630nA @ 5V is required to supply this electrical device.Voltage (Tol) is limited to 5%.Zener (Nom)'s maximum voltage is reduced to zero during operation.To operate this device, set the working test voltage to 5mA.1V @ 10mA is reached when the maximum voltage - Forward (Vf) is supplied for its operation.

BZT52C8V2 RHG Features


reverse leakage current of 630nA @ 5V
630nA @ 5V is the maximum voltage (Tol)
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT52C8V2 RHG Applications


There are a lot of Taiwan Semiconductor Corporation
BZT52C8V2 RHG applications of zener single diodes.


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