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BZT52C6V2-G RHG

BZT52C6V2-G RHG

BZT52C6V2-G RHG

Taiwan Semiconductor Corporation

ZENER DIODE 10Ohm ±5% 3μA @ 4V 150°C TJ 2 Terminations SOD-123

SOT-23

BZT52C6V2-G RHG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case SOD-123
Surface MountYES
Diode Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Tolerance ±5%
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Configuration SINGLE
Power Dissipation-Max 0.35W
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 3μA @ 4V
Voltage - Forward (Vf) (Max) @ If 900mV @ 10mA
Power - Max 350mW
Impedance-Max 10Ohm
Reference Voltage6.2V
Voltage - Zener (Nom) (Vz) 6.2V
Voltage Tol-Max 5%
Working Test Current 5mA
RoHS StatusROHS3 Compliant
In-Stock:121183 items

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BZT52C6V2-G RHG Product Details

BZT52C6V2-G RHG Overview


An electrical device such as this requires reverse leakage current of 3μA @ 4V.A voltage of 5% is considered to be the maximum that can be output (Tol).During operation, the maximum voltage - Zener (Nom) is reduced to 6.2V volts.Setting the working test voltage to 5mA is required to operate this device.As soon as the maximum voltage - Forward (Vf) is supplied, it reaches 900mV @ 10mA V.

BZT52C6V2-G RHG Features


reverse leakage current of 3μA @ 4V
3μA @ 4V is the maximum voltage (Tol)
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT52C6V2-G RHG Applications


There are a lot of Taiwan Semiconductor Corporation
BZT52C6V2-G RHG applications of zener single diodes.


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