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BZT52C11K RKG

BZT52C11K RKG

BZT52C11K RKG

Taiwan Semiconductor Corporation

ZENER DIODE 20Ohm ±5% 100nA @ 8V -65°C~150°C TJ 2 Terminations SC-79, SOD-523

SOT-23

BZT52C11K RKG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case SC-79, SOD-523
Surface MountYES
Diode Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2011
Tolerance ±5%
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F2
Number of Elements 1
Polarity UNIDIRECTIONAL
Configuration SINGLE
Power Dissipation-Max 0.2W
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 8V
Power - Max 200mW
Impedance-Max 20Ohm
Reference Voltage11V
Voltage - Zener (Nom) (Vz) 11V
Voltage Tol-Max 2%
Working Test Current 5mA
RoHS StatusROHS3 Compliant
In-Stock:154727 items

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BZT52C11K RKG Product Details

BZT52C11K RKG Overview


In order to supply this electrical device, a reverse leakage current of 100nA @ 8V is required.This value (Tol) represents the maximum voltage that can be supplied.Zener (Nom) voltage is reduced to 11V during operation.This device should be operated with 5mA as the working test voltage.

BZT52C11K RKG Features


reverse leakage current of 100nA @ 8V
100nA @ 8V is the maximum voltage (Tol)
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT52C11K RKG Applications


There are a lot of Taiwan Semiconductor Corporation
BZT52C11K RKG applications of zener single diodes.


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