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BZT52C10-G RHG

BZT52C10-G RHG

BZT52C10-G RHG

Taiwan Semiconductor Corporation

20Ohms ±5% 200nA @ 7V 150°C TJ SOD-123

SOT-23

BZT52C10-G RHG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case SOD-123
Supplier Device Package SOD-123
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Tolerance ±5%
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Reverse Leakage @ Vr 200nA @ 7V
Voltage - Forward (Vf) (Max) @ If 900mV @ 10mA
Power - Max 350mW
Impedance-Max 20Ohms
Voltage - Zener (Nom) (Vz) 10V
RoHS StatusROHS3 Compliant
In-Stock:139542 items

Pricing & Ordering

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BZT52C10-G RHG Product Details

BZT52C10-G RHG Overview


An electrical device like this requires a reverse leakage current of 200nA @ 7V.While the device is operating, the maximum voltage - Zener (Nom) is reduced to 10V.For operation, diode reaches 900mV @ 10mA at the maximum voltage - Forward (Vf).

BZT52C10-G RHG Features


reverse leakage current of 200nA @ 7V
200nA @ 7V is the maximum voltage (Tol)


BZT52C10-G RHG Applications


There are a lot of Taiwan Semiconductor Corporation
BZT52C10-G RHG applications of zener single diodes.


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