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BZT52B18-G RHG

BZT52B18-G RHG

BZT52B18-G RHG

Taiwan Semiconductor Corporation

ZENER DIODE 45Ohm ±2% 100nA @ 12.6V -55°C~150°C TJ SOD-123

SOT-23

BZT52B18-G RHG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case SOD-123
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Tolerance ±2%
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 12.6V
Voltage - Forward (Vf) (Max) @ If 900mV @ 10mA
Power - Max 410mW
Impedance-Max 45Ohm
Voltage - Zener (Nom) (Vz) 18V
RoHS StatusROHS3 Compliant
In-Stock:147580 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BZT52B18-G RHG Product Details

BZT52B18-G RHG Overview


A reverse leakage current of 100nA @ 12.6V is required to supply this electrical device.Zener (Nom)'s maximum voltage is reduced to zero during operation.900mV @ 10mA is reached when the maximum voltage - Forward (Vf) is supplied for its operation.

BZT52B18-G RHG Features


reverse leakage current of 100nA @ 12.6V
100nA @ 12.6V is the maximum voltage (Tol)


BZT52B18-G RHG Applications


There are a lot of Taiwan Semiconductor Corporation
BZT52B18-G RHG applications of zener single diodes.


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