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BZS55C4V7 RXG

BZS55C4V7 RXG

BZS55C4V7 RXG

Taiwan Semiconductor Corporation

ZENER DIODE 70Ohm ±5% 500nA @ 1V -55°C~150°C TJ 1206 (3216 Metric)

SOT-23

BZS55C4V7 RXG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case 1206 (3216 Metric)
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Tolerance ±5%
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 500nA @ 1V
Voltage - Forward (Vf) (Max) @ If 1.5V @ 10mA
Power - Max 500mW
Impedance-Max 70Ohm
Voltage - Zener (Nom) (Vz) 4.7V
RoHS StatusROHS3 Compliant
In-Stock:177097 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BZS55C4V7 RXG Product Details

BZS55C4V7 RXG Overview


The reverse leakage current needed to power this electric device is 500nA @ 1V.As part of the operation, the maximum voltage - Zener (Nom) is reduced to 4.7V.For its operation, the maximum voltage - Forward (Vf) 1.5V @ 10mA is supplied.

BZS55C4V7 RXG Features


reverse leakage current of 500nA @ 1V
500nA @ 1V is the maximum voltage (Tol)


BZS55C4V7 RXG Applications


There are a lot of Taiwan Semiconductor Corporation
BZS55C4V7 RXG applications of zener single diodes.


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