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BZD17C11P RQG

BZD17C11P RQG

BZD17C11P RQG

Taiwan Semiconductor Corporation

7Ohms ±5.45% 4μA @ 8.2V -55°C~175°C TJ DO-219AB

SOT-23

BZD17C11P RQG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case DO-219AB
Supplier Device Package Sub SMA
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Tolerance ±5.45%
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Reverse Leakage @ Vr 4μA @ 8.2V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 200mA
Power - Max 800mW
Impedance-Max 7Ohms
Voltage - Zener (Nom) (Vz) 11V
RoHS StatusROHS3 Compliant
In-Stock:4800 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BZD17C11P RQG Product Details

BZD17C11P RQG Overview


The reverse leakage current for this electrical device is 4μA @ 8.2V.In the course of operation, Zener (Nom) drops to zero voltage.This value reaches 1.2V @ 200mA when the maximum Forward voltage (Vf) is applied.

BZD17C11P RQG Features


reverse leakage current of 4μA @ 8.2V
4μA @ 8.2V is the maximum voltage (Tol)


BZD17C11P RQG Applications


There are a lot of Taiwan Semiconductor Corporation
BZD17C11P RQG applications of zener single diodes.


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