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BAV21WS R9G

BAV21WS R9G

BAV21WS R9G

Taiwan Semiconductor Corporation

DIODE GEN PURP 250V 200MA SOD323

SOT-23

BAV21WS R9G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case SC-90, SOD-323F
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 100nA @ 200V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 200mA
Operating Temperature - Junction -65°C~150°C
Voltage - DC Reverse (Vr) (Max) 250V
Current - Average Rectified (Io) 200mA
Reverse Recovery Time 50ns
Capacitance @ Vr, F 5pF @ 0V 1MHz
RoHS StatusROHS3 Compliant
In-Stock:214680 items

Pricing & Ordering

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About BAV21WS R9G

The BAV21WS R9G from Taiwan Semiconductor Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 250V 200MA SOD323.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BAV21WS R9G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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