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MBR10H200CT C0

MBR10H200CT C0

MBR10H200CT C0

Taiwan Semiconductor

Tube

SOT-23

MBR10H200CT C0 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 200
Peak Reverse Repetitive Voltage (V) 200
Maximum Continuous Forward Current (A) 10
Peak Non-Repetitive Surge Current (A) 120
Peak Forward Voltage (V) 0.97
Peak Reverse Current (uA) 5
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Standard Package Name TO-220
Supplier Package TO-220AB
Military No
Mounting Through Hole
Package Height 8.24(Max)
Package Length 10.5(Max)
Package Width 4.7(Max)
PCB changed 3
Tab Tab
PackagingTube
Part StatusActive
Type Schottky Diode
Pin Count3
Configuration Dual Common Cathode
RoHS StatusYes with exemptions
In-Stock:1635 items

MBR10H200CT C0 Product Details

MBR10H200CT C0 Overview


The peak forward voltage on the datasheets is 0.97.Normally, this device consumes about 10 of continuous forward current.During operation, DC reverse voltage must not exceed 200.

MBR10H200CT C0 Features


the forward peak voltage is 0.97


MBR10H200CT C0 Applications


There are a lot of Taiwan Semiconductor
MBR10H200CT C0 applications of RF diodes.


  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer

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