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HS3GBHR4G

HS3GBHR4G

HS3GBHR4G

Taiwan Semiconductor

RECTIFIER DIODE SILICON NOT SPECIFIED DUAL

SOT-23

HS3GBHR4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
Diode Element Material SILICON
Number of Terminals 2
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 400
Peak Reverse Repetitive Voltage (V) 400
Maximum Continuous Forward Current (A) 3
Peak Non-Repetitive Surge Current (A) 100
Peak Forward Voltage (V) 1.3
Peak Reverse Current (uA) 10
Peak Reverse Recovery Time (ns) 50
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
AEC Qualified Number AEC-Q101
Supplier Package SMB
Military No
Mounting Surface Mount
Package Height 2.41(Max)
Package Length 4.75(Max)
Package Width 3.73(Max)
PCB changed 2
Lead Shape Inward L-Lead
Manufacturer Taiwan Semiconductor
Package Shape RECTANGULAR
JESD-609 Code e3
Part StatusObsolete
ECCN Code EAR99
Type Switching Diode
Terminal Finish Matte Tin (Sn)
Additional FeatureLOW POWER LOSS
HTS Code8541.10.00.80
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count2
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-C2
Number of Elements 1
Configuration Single
Diode Type RECTIFIER DIODE
Output Current-Max 3 A
Application EFFICIENCY
Number of Phases 1
Rep Pk Reverse Voltage-Max 400 V
JEDEC-95 Code DO-214AA
Non-rep Pk Forward Current-Max 100 A
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 0.05 µs
RoHS StatusYes with exemptions
In-Stock:1562 items

HS3GBHR4G Product Details

HS3GBHR4G Overview


In the datasheets, 1.3 is stated as the peak forward voltage.A continuous forward current of 3 is the maximum consumption of this device.RF diode is necessary to operate the device at a DC reverse voltage below 400.This device can read current voltages up to 3 A.

HS3GBHR4G Features


the forward peak voltage is 1.3
a maximum output current voltage of 3 A


HS3GBHR4G Applications


There are a lot of Taiwan Semiconductor
HS3GBHR4G applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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