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HS3BBHM4G

HS3BBHM4G

HS3BBHM4G

Taiwan Semiconductor

SOT-23

HS3BBHM4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 100
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 3
Peak Non-Repetitive Surge Current (A) 100
Peak Forward Voltage (V) 1
Peak Reverse Current (uA) 10
Peak Reverse Recovery Time (ns) 50
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
AEC Qualified Yes
AEC Qualified Number AEC-Q101
Supplier Package SMB
Military No
Mounting Surface Mount
Package Height 2.41(Max)
Package Length 4.75(Max)
Package Width 3.73(Max)
PCB changed 2
Lead Shape Inward L-Lead
Part StatusObsolete
Type Switching Diode
Pin Count2
Configuration Single
RoHS StatusYes with exemptions
In-Stock:4246 items

HS3BBHM4G Product Details

HS3BBHM4G Overview


The datasheets indicate that the peak forward voltage is 1.At any given time, this device consumes about 3 continuous forward current.The DC reverse voltage must be less than 100.

HS3BBHM4G Features


the forward peak voltage is 1


HS3BBHM4G Applications


There are a lot of Taiwan Semiconductor
HS3BBHM4G applications of RF diodes.


  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes

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