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GBU1006 C2

GBU1006 C2

GBU1006 C2

Taiwan Semiconductor

BRIDGE RECTIFIER DIODE SILICON SINGLE Tube

SOT-23

GBU1006 C2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountNO
Diode Element Material SILICON
Number of Terminals 4
ECCN (US) EAR99
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 800
Peak Average Forward Current (A) 10
Peak RMS Reverse Voltage (V) 560
Peak Non-Repetitive Forward Surge Current (A) 220
Peak Forward Voltage (V) 1.1
Peak Reverse Current (uA) 5
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
AEC Qualified No
Standard Package Name Case GBU
Supplier Package Case GBU
Military No
Mounting Through Hole
Package Height 18.8(Max)
Package Length 22.3(Max)
Package Width 3.56(Max)
PCB changed 4
Package Shape RECTANGULAR
Manufacturer Taiwan Semiconductor
PackagingTube
Part StatusActive
ECCN Code EAR99
Additional FeatureUL RECOGNIZED
HTS Code8541.10.00.80
Subcategory Bridge Rectifier Diodes
Terminal Position SINGLE
Terminal FormTHROUGH-HOLE
Reach Compliance Code compliant
Pin Count4
JESD-30 Code R-PSFM-T4
Number of Elements 4
Configuration Single
Diode Type BRIDGE RECTIFIER DIODE
Case Connection ISOLATED
Output Current-Max 10 A
Number of Phases 1
Rep Pk Reverse Voltage-Max 800 V
Non-rep Pk Forward Current-Max 220 A
Breakdown Voltage-Min 800 V
RoHS StatusYes with exemptions
In-Stock:2833 items

GBU1006 C2 Product Details

GBU1006 C2 Overview


Datasheets indicate 1.1 as the peak forward voltage.RF diode operates efficiently wRF diodeh a peak reverse voltage range of 560.RF diode is possible that this device may occasionally operate at RF diodes lowest breakdown voltage of 800 V.This device can measure a maximum output voltage of 10 A.

GBU1006 C2 Features


the forward peak voltage is 1.1
the peak RMS reverse voltage range of 560
at its lowest breakdown voltage of 800 V
a maximum output current voltage of 10 A


GBU1006 C2 Applications


There are a lot of Taiwan Semiconductor
GBU1006 C2 applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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