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1N5391G-T A0G

1N5391G-T A0G

1N5391G-T A0G

Taiwan Semiconductor

RECTIFIER DIODE SILICON NOT SPECIFIED AXIAL Ammo

SOT-23

1N5391G-T A0G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountNO
Diode Element Material SILICON
Number of Terminals 2
ECCN (US) EAR99
Peak Reverse Repetitive Voltage (V) 50
Maximum Continuous Forward Current (A) 1.5
Peak Non-Repetitive Surge Current (A) 50
Peak Forward Voltage (V) 1.1
Peak Reverse Current (uA) 5
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Package DO-15
Military No
Mounting Through Hole
Package Length 7.6(Max)
PCB changed 2
Package Shape ROUND
Manufacturer Taiwan Semiconductor
PackagingAmmo
Part StatusActive
Type Switching Diode
Additional FeatureLOW POWER LOSS
Terminal Position AXIAL
Terminal FormWIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count2
JESD-30 Code O-PALF-W2
Number of Elements 1
Configuration Single
Diode Type RECTIFIER DIODE
Case Connection ISOLATED
Output Current-Max 1.5 A
Application EFFICIENCY
Number of Phases 1
Rep Pk Reverse Voltage-Max 50 V
JEDEC-95 Code DO-204AC
Non-rep Pk Forward Current-Max 50 A
Reverse Current-Max 5 µA
Diameter 3.6(Max)
RoHS StatusYes with exemptions
In-Stock:1145 items

1N5391G-T A0G Product Details

1N5391G-T A0G Overview


In accordance with the datasheets, the forward peak voltage is 1.1.Approximately 1.5 is the maximum continuous forward current consumed by this device at any given time.This device is capable of reading a maximum output current voltage of 1.5 A.

1N5391G-T A0G Features


the forward peak voltage is 1.1
a maximum output current voltage of 1.5 A


1N5391G-T A0G Applications


There are a lot of Taiwan Semiconductor
1N5391G-T A0G applications of RF diodes.


  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors

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