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VND5N07-E

VND5N07-E

VND5N07-E

STMicroelectronics

N-Channel 2.28mm PMIC OMNIFET II?, VIPower? Series VND5N07 3 Pin 5V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

VND5N07-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature-40°C~150°C TJ
PackagingTube
Series OMNIFET II™, VIPower™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Resistance 200mOhm
Terminal Finish Matte Tin (Sn) - annealed
Max Power Dissipation60W
Terminal Position SINGLE
Terminal FormGULL WING
Number of Functions 1
Supply Voltage 5V
Terminal Pitch2.28mm
Base Part Number VND5N07
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Outputs 1
Output Type N-Channel
Max Output Current5A
Voltage 70V
Interface On/Off
Current - Output (Max) 3.5A
Nominal Supply Current250μA
Current 5A
Output Configuration Low Side
Power Dissipation60W
Output Current5A
Voltage - Supply (Vcc/Vdd) Not Required
Input Type Non-Inverting
Turn On Delay Time250 ns
Switch TypeGeneral Purpose
Drain to Source Voltage (Vdss) 70V
Turn-Off Delay Time 5 μs
Continuous Drain Current (ID) 5A
Threshold Voltage 3V
Ratio - Input:Output 1:1
Voltage - Load 55V Max
Fault ProtectionCurrent Limiting (Fixed), Over Temperature, Over Voltage
Drain to Source Breakdown Voltage 70V
Output Peak Current Limit-Nom 5A
Rds On (Typ) 200m Ω (Max)
Drain to Source Resistance 200mOhm
Built-in Protections TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
Height 2.63mm
Length 6.6mm
Width 6.2mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2518 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.94000$1.94
75$1.58907$119.18025
150$1.44040$216.06
525$1.14314$600.1485

VND5N07-E Product Details

VND5N07-E Description


The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M technology, intended for replacement of the standard Power MOSFETs from DC to 50 KHz applications.



VND5N07-E Features


  • Linear current limitation

  • Thermal shutdown

  • Short circuit protection

  • Integrated clamp

  • The low current is drawn from the input pin

  • Diagnostic feedback through input pin

  • ESD protection

  • Direct access to the gate of the power MOSFET (analogue driving)

  • Compatible with standard Power MOSFET



VND5N07-E Applications


  • Industrial


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