Name: STY34NB50
Brand: STMicroelectronics
SKU: STY34NB50
Availability: InStock

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STY34NB50

Manufacturer part number:STY34NB50

Manufacturer:STMicroelectronics

Description:STY34NB50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STY34NB50 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	34A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STY34N
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	450W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	450W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	130m Ω @ 17A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	34A Tc
Gate Charge (Qg) (Max) @ Vgs	223nC @ 10V
Rise Time	32ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	53 ns
Continuous Drain Current (ID)	34A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.13Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	136A
Avalanche Energy Rating (Eas)	1000 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

STY34NB50 Product Details

STY34NB50 Description

SGS-Thomson has produced a cutting-edge family of power MOSFETs with exceptional performances using the most recent high voltage MESH OVERLAY technology. The combination of the novel, patent-pending strip layout and the company's exclusive edge termination structure results in the lowest RDS(on) per area, outstanding avalanche and dv/dt capabilities, and unmatched gate charge and switching characteristics.