STY100NS20FD Description
STMicroelectronics has developed a sophisticated family of Power MOSFETs with exceptional performances using the most recent high voltage MESH OVERLAYTM technology. With the help of the company's exclusive edge termination structure and the newly-patentable STrip layout, the lowest RDS(ON) per area, remarkable avalanche and dv/dt capabilities, and unmatched gate charge and switching characteristics may be achieved.
STY100NS20FD Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
?à 20V gate to source voltage rating
Low intrinsic capacitance
Fast body-drain diode:low trr, Qrr
STY100NS20FD Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
