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STW28NM50N

STW28NM50N

STW28NM50N

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 158m Ω @ 10.5A, 10V ±25V 1735pF @ 25V 50nC @ 10V TO-247-3

SOT-23

STW28NM50N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Series MDmesh™ II
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 158mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STW28N
Pin Count3
Number of Elements 1
Power Dissipation-Max 150W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation150W
Turn On Delay Time13.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 158m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1735pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time19ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 52 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 84A
Height 20.15mm
Length 15.75mm
Width 5.15mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1002 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.79000$7.79
30$6.47933$194.3799
120$5.89625$707.55
510$5.02176$2561.0976

STW28NM50N Product Details

STW28NM50N Description


STW28NM50N is a type of N-channel power MOSFET provided by ON Semiconductor based on the second generation of MDmesh? technology. Based on its improved vertical structure, it is able to provide low on-resistance and low gate charge. As a result, power MOSFET STW28NM50N is well suited for high-efficiency converters.



STW28NM50N Features


  • Low RDS (on)

  • Low on-resistance

  • Low input capacitance

  • Improved vertical structure

  • Extremely low gate charge

  • Available in the TO-247 package



STW28NM50N Applications


  • Switching applications


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