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STW23NM60ND

STW23NM60ND

STW23NM60ND

STMicroelectronics

STW23NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STW23NM60ND Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Series FDmesh™ II
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 180mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STW23N
Pin Count3
Number of Elements 1
Power Dissipation-Max 150W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation150W
Turn On Delay Time21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 50V
Current - Continuous Drain (Id) @ 25°C 19.5A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time45ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 19.5A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 78A
Avalanche Energy Rating (Eas) 700 mJ
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2038 items

STW23NM60ND Product Details

STW23NM60ND Description


STW23NM60ND belongs to the family of N-channel FDmesh? II power MOSFETs manufactured by STMicroelectronics based on its MDmesh? technology. It is able to provide lower on-resistance and superior switching performance based on the strip layout and improved vertical structure. As a result, it is well suited for bridge topologies, in particular ZVS phase-shift converters.



STW23NM60ND Features


  • Improved vertical structure

  • Low on-state resistance

  • Low gate input resistance

  • Low input capacitance and gate charge

  • High dv/dt and avalanche capabilities



STW23NM60ND Applications


  • ZVS phase-shift converters


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