STW20NM60 Description
The company's PowerMESHTM horizontal arrangement is associated with the multiple drain process by the new, cutting-edge MDmeshTM Power MOSFET technology. The finished product has superb avalanche characteristics, an extremely high dv/dt, and an outstanding low on-resistance. When the company's exclusive strip technology is used, the resulting dynamic performance is noticeably superior to that of identical items made by rival companies.
STW20NM60 Features
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
STW20NM60 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
