Name: STW17N62K3
Brand: STMicroelectronics
SKU: STW17N62K3
Availability: InStock

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STW17N62K3

Manufacturer part number:STW17N62K3

Manufacturer:STMicroelectronics

Description:STW17N62K3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW17N62K3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	SuperMESH3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	280mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE ENERGY RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STW17N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	190W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190W
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	380m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 50V
Current - Continuous Drain (Id) @ 25°C	15.5A Tc
Gate Charge (Qg) (Max) @ Vgs	94nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	63 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	15.5A
Threshold Voltage	3.75V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	620V
Pulsed Drain Current-Max (IDM)	60A
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STW17N62K3 Product Details

STW17N62K3 Description

STW17N62K3 SuperMESH3? Power MOSFET is the result of improvements applied to STMicroelectronics?ˉ SuperMESH? technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications