Name: STW14NM50
Brand: STMicroelectronics
SKU: STW14NM50
Availability: InStock

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STW14NM50

Manufacturer part number:STW14NM50

Manufacturer:STMicroelectronics

Description:STW14NM50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW14NM50 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	550V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT APPLICABLE
Reach Compliance Code	not_compliant
Current Rating	14A
[email protected] Reflow Temperature-Max (s)	NOT APPLICABLE
Base Part Number	STW14N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	175W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	175W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	350m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	14A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	14A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.35Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	56A
Avalanche Energy Rating (Eas)	400 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STW14NM50 Product Details

STW14NM50 Description

The STMicroelectronics STW14NM50 is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charges.