STW12N120K5 Description
MDmeshTM K5 technology is used to build STW12N120K5 MOSFETs, which are based on an innovative patented vertical structure. For applications needing great power density and efficiency, the outcome is a significant reduction in on-resistance and an ultra-low gate charge.
STW12N120K5 Features
Best FOM worldwide (figure of merit)
Gate charge is really low.
Avalanche-proofed to the nth degree
Zener-protected
STW12N120K5 Applications
Switching applications
