Name: STP8NM50
Brand: STMicroelectronics
SKU: STP8NM50
Availability: InStock

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STP8NM50

Manufacturer part number:STP8NM50

Manufacturer:STMicroelectronics

Description:STP8NM50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP8NM50 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tube
Series	MDmesh™ II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	800MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	550V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	8A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STP8N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	100W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	100W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	800m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	415pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	6 ns
Continuous Drain Current (ID)	8A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	8A
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	32A
Avalanche Energy Rating (Eas)	200 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP8NM50 Product Details

STP8NM50 Description

STP8NM50 is a 500v N-channel MDmesh?II Power MOSFET which developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET STP8NM50 associates a vertical structure to the company?ˉs strip layout to yield one of the world?ˉs lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.