Name: STP5NK100Z
Brand: STMicroelectronics
SKU: STP5NK100Z
Price: 4.33000 USD
Availability: InStock

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STP5NK100Z

Manufacturer part number:STP5NK100Z

Manufacturer:STMicroelectronics

Description:STP5NK100Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP5NK100Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH3™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	3.7Ohm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	1kV
Technology	MOSFET (Metal Oxide)
Current Rating	3.5A
Base Part Number	STP5N
Number of Elements	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Power Dissipation	125W
Turn On Delay Time	22.5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.7Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1154pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.5A Tc
Gate Charge (Qg) (Max) @ Vgs	59nC @ 10V
Rise Time	7.7ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	51.5 ns
Continuous Drain Current (ID)	3.5A
Threshold Voltage	3.75V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	1kV
Input Capacitance	1.154nF
Drain to Source Resistance	3.7Ohm
Rds On Max	3.7 Ω
Height	9.15mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP5NK100Z Product Details

STP5NK100Z Description

STP5NK100Z is a 1000V N-channel SuperMESH3? Power MOSFET. The new SuperMESHTM series of Power MOSFETS is the result of further design improvements on ST's well-established strip-based PowerMESHTM layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESHTM STP5NK100Z further complements an already broad range of innovative high-voltage MOSFETs, which includes the revolutionary MDmeshTM products.