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STP5N120

STP5N120

STP5N120

STMicroelectronics

STP5N120 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STP5N120 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series SuperMESH™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3.5Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP5N
Pin Count3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 160W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation160W
Turn On Delay Time18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.7A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time9ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 4.7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 4.4A
Drain to Source Breakdown Voltage 1.2kV
Avalanche Energy Rating (Eas) 400 mJ
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4190 items

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STP5N120 Product Details

STP5N120 Description


The STP5N120 SuperMESH? Zener-protected MOSFET is part of the SuperMESH? series, which was created via extreme optimization of ST's well-known strip-based d PowerMESH?structure. In addition to drastically lowering on-resistance, extra effort is made to assure very good dv/dt capability for the most demanding applications. This series compliments ST's entire line of high voltage Power MOSFETs.



STP5N120 Features


  • 100% avalanche tested

  • Extremely high dv/dt capability

  • ESD improved capability

  • New high voltage benchmark

  • Gate charge minimized



STP5N120 Applications


  • Switching applications


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