Name: STP4NK80ZFP
Brand: STMicroelectronics
SKU: STP4NK80ZFP
Price: 2.43000 USD
Availability: InStock

new-10%

STP4NK80ZFP

Manufacturer part number:STP4NK80ZFP

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 3.5 Ω @ 1.5A, 10V ±30V 575pF @ 25V 22.5nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:STP4NK80ZFP Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	3.5Ohm
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STP4N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	25W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	25W
Case Connection	ISOLATED
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	575pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3A Tc
Gate Charge (Qg) (Max) @ Vgs	22.5nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	3A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	12A
Avalanche Energy Rating (Eas)	190 mJ
Height	9.3mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP4NK80ZFP Product Details

STP4NK80ZFP Description

The SuperMESH series is obtained through an extreme optimization of ST’s well-established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including revolutionary MDmesh products.