Name: STP4NK50Z
Brand: STMicroelectronics
SKU: STP4NK50Z
Availability: InStock

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STP4NK50Z

Manufacturer part number:STP4NK50Z

Manufacturer:STMicroelectronics

Description:STP4NK50Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP4NK50Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	2.7Ohm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	3A
Base Part Number	STP4N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	45W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	45W
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.7 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	310pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	3A
Threshold Voltage	3.75V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	500V
Dual Supply Voltage	500V
Nominal Vgs	3.75 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP4NK50Z Product Details

STP4NK50Z Description

The STP4NK50Z Zener-protected N-channel Power MOSFET was developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.