STP25NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STP25NM60ND Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
FDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
160mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP25N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
Turn On Delay Time
60 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
160m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2400pF @ 50V
Current - Continuous Drain (Id) @ 25°C
21A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
50 ns
Continuous Drain Current (ID)
21A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
84A
Avalanche Energy Rating (Eas)
850 mJ
Height
15.75mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1108 items
STP25NM60ND Product Details
STP25NM60ND Description
As a member of FDmesh? II power MOSFETs provided by STMicroelectronics, STP25NM60ND is equipped with an intrinsic fast-recovery body diode and developed based on the second generation of MDmesh? technology. It is optimized for extremely low on-resistance and superior switching performance. Power MOSFET STP25NM60ND is well suited for bridge topologies and ZVS phase-shift converters.
STP25NM60ND Features
Low input capacitance
Low gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
Available in the TO-220 package
STP25NM60ND Applications
Switching applications
Bridge topologies
ZVS phase-shift converters
Related Products
Similar Transistors - FETs, MOSFETs - Single from STMicroelectronics and other manufacturers
