STP23NM60ND Description
These FDMesh "II power MOSFET" with inherent fast recovery body diodes are produced using the second generation MDMesh technology. These revolutionary devices use a new stripe layout vertical structure with extremely low on-resistance and excellent switching performance. They are ideal for bridge topologies and ZVS phase shifters.
STP23NM60ND Features
■ The worldwide best RDS(on) * area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
STP23NM60ND Applications
■ Switching applications
