Name: STP22NF03L
Brand: STMicroelectronics
SKU: STP22NF03L
Availability: InStock

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STP22NF03L

Manufacturer part number:STP22NF03L

Manufacturer:STMicroelectronics

Description:STP22NF03L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP22NF03L Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™ II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	22A
Base Part Number	STP22N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	45W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	45W
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	50m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 25V
Current - Continuous Drain (Id) @ 25°C	22A Tc
Gate Charge (Qg) (Max) @ Vgs	9nC @ 5V
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±15V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	22A
Threshold Voltage	1V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	15V
Drain-source On Resistance-Max	0.06Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	88A
Avalanche Energy Rating (Eas)	200 mJ
Height	9.15mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP22NF03L Product Details

STP22NF03L Description

STP22NF03L is a 30v N-channel STripFET? II Power MOSFET. This Power MOSFET STP22NF03L is the latest development of STMicroelectronics' unique "single feature size" strip-based process. The resulting transistor STP22NF03L shows extremely high packing density for low resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.