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STP20NM60

STP20NM60

STP20NM60

STMicroelectronics

STP20NM60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STP20NM60 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Series MDmesh™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 290mOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Current Rating20A
Base Part Number STP20N
Pin Count3
Number of Elements 1
Power Dissipation-Max 192W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation192W
Turn On Delay Time25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 290m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Rise Time20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 650 mJ
Nominal Vgs 4 V
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1219 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.47000$6.47
50$5.19760$259.88
100$4.73550$473.55
500$3.83460$1917.3

STP20NM60 Product Details

STP20NM60 Description


The STP20NM60 MDmeshTM is a new innovative Power MOSFET technology that combines the company's PowerMESHTM horizontal architecture with the multiple drain process. The end result has an exceptional low on-resistance, an exceptionally high dv/dt, and good avalanche properties. The use of the company's proprietary strip process results in total dynamic performance that is far superior to that of similar competitors' products.


STP20NM60 Features


Avalanche and high dv/dt capabilities

Avalanche safety is guaranteed.

Low gate charge and input capacitance

Low input gate resistance


STP20NM60 Applications


Switching applications.

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