Name: STP12NM50N
Brand: STMicroelectronics
SKU: STP12NM50N
Availability: InStock

new-10%

STP12NM50N

Manufacturer part number:STP12NM50N

Manufacturer:STMicroelectronics

Description:STP12NM50N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP12NM50N Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	MDmesh™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	380mOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	11A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STP12
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	100W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	100W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	380m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	940pF @ 50V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	3V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	44A
Isolation Voltage	2.5kV
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP12NM50N Product Details

STP12NM50N Description

STP12NM50N is a 500v N-channel MDmesh? II Power MOSFET. This STP12NM50N is realized with the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company?ˉs strip layout to yield one of the world?ˉs lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.