Name: STP11NM80
Brand: STMicroelectronics
SKU: STP11NM80
Price: 6.65000 USD
Availability: InStock

new-10%

STP11NM80

Manufacturer part number:STP11NM80

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 400m Ω @ 5.5A, 10V ±30V 1630pF @ 25V 43.6nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:STP11NM80 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tube
Series	MDmesh™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	400mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Current Rating	11A
Base Part Number	STP11N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	400m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1630pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	43.6nC @ 10V
Rise Time	17ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	44A
Avalanche Energy Rating (Eas)	400 mJ
Height	9.15mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP11NM80 Product Details

STP11NM80 Description

STP11NM80 emerges as a member of N-channel power MOSFETs provided by STMicroelectronics based on its revolutionary MDmesh? technology. As a result, it is able to provide low on-state resistance, high dv/dt, and excellent avalanche characteristics. STP11NM80 provides considerable benefits for switching applications. It boasts an overall dynamic performance that is superior to similar products available on the market.