STP11NM60N Description
STP11NM60N is a 600v N-channel MDmesh? II Power MOSFET. This STP11NM60N is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.
STP11NM60N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Drain-source voltage (VGS = 0): 600v
Total dissipation at TC = 25 °C: 90w
In the TO-220 package
STP11NM60N Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
