STN951 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 2A 1V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 6V to gain high efficiency.In the part, the transition frequency is 130MHz.Single BJT transistor can be broken down at a voltage of 60V volts.In extreme cases, the collector current can be as low as 5A volts.
STN951 Features
the DC current gain for this device is 150 @ 2A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 5A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz
STN951 Applications
There are a lot of STMicroelectronics STN951 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
