Name: STL18N65M5
Brand: STMicroelectronics
SKU: STL18N65M5
Price: 3.56000 USD
Availability: InStock

new-10%

STL18N65M5

Manufacturer part number:STL18N65M5

Manufacturer:STMicroelectronics

Description:STL18N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STL18N65M5 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™ V
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	240mOhm
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Base Part Number	STL18
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Number of Channels	2
Power Dissipation-Max	57W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	57W
Case Connection	DRAIN
Turn On Delay Time	36 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	240m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1240pF @ 100V
Current - Continuous Drain (Id) @ 25°C	15A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	9 ns
Continuous Drain Current (ID)	15A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	60A
Height	1mm
Length	5.4mm
Width	6.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STL18N65M5 Product Details

STL18N65M5 Description

The STL18N65M5 is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The STMicroelectronics STL18N65M5 offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. What's more, the STL18N65M5 operates within ambient temperatures from -55 to 150°C and with power dissipation 57W.

STL18N65M5 Features

Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
In PowerFLAT-5x6-8 package

STL18N65M5 Applications

communication devices
band selectors in multi-band radios
DIP Switch
Telecommunication,
Computer motherboards
Remote controls for frequency settings and other electronic devices that requires option settings