STL100N10F7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STL100N10F7 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
DeepGATE™, STripFET™ VII
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Base Part Number
STL100
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Power Dissipation-Max
5W Ta 100W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
100W
Case Connection
DRAIN
Turn On Delay Time
27 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7.3m Ω @ 19A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5680pF @ 50V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Rise Time
40ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
46 ns
Continuous Drain Current (ID)
80A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
70A
Drain-source On Resistance-Max
0.0073Ohm
Pulsed Drain Current-Max (IDM)
76A
Avalanche Energy Rating (Eas)
400 mJ
Height
950μm
Length
5.4mm
Width
6.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2998 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STL100N10F7 Product Details
STL100N10F7 Description
The STL100N10F7 is an N-channel gate MOSFET designed using the STripFETTM DeepGATETM technology, the 7th generation of STripFETTM technology. As a result, all power MOSFETs resulting from the process show the lowest RDS(on).
STL100N10F7 Features
100% avalanche tested
Ultra-low on-resistance
STL100N10F7 Applications
Darlington pairs
Audio amplifier applications
Different types of signal amplification
Switching loads up to 150mA
Audio preamplifier applications
Related Products
Similar Transistors - FETs, MOSFETs - Single from STMicroelectronics and other manufacturers
