STGYA120M65DF2AG Description
STGYA120M65DF2AG is an IGBT with a trench gate field stop construction developed by STGYA. The device is part of the M series of IGBTs, which provide an ideal blend of inverter system performance and efficiency in applications where low-loss and short-circuit functionality are critical. Furthermore, the VCE score is positive (sat) The tight parameter distribution and temperature coefficient result in safer paralleling operation.
STGYA120M65DF2AG Features
Safer paralleling
AEC-Q101 qualified
Low thermal resistance
Tight parameter distribution
6 μs of short-circuit withstand time
VCE(sat) = 1.65 V (typ.) @ IC = 120 A
Positive VCE(sat) temperature coefficient
Soft and very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
STGYA120M65DF2AG Applications
