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STGB3NB60KDT4

STGB3NB60KDT4

STGB3NB60KDT4

STMicroelectronics

STGB3NB60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGB3NB60KDT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation50W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Current Rating6A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STGB3
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation50W
Input Type Standard
Transistor Application POWER CONTROL
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 10A
Reverse Recovery Time 45ns
Continuous Drain Current (ID) 6A
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.8V
Turn On Time19 ns
Test Condition 480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Turn Off Time-Nom (toff) 220 ns
Gate Charge14nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 14ns/33ns
Switching Energy 30μJ (on), 58μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4988 items

Pricing & Ordering

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STGB3NB60KDT4 Product Details

STGB3NB60KDT4 Description


STGB3NB60KDT4, a member of the PowerMESH IGBTs, is a type of IGBT developed by STMicroelectronics based on g the latest high-voltage technology and a patented strip layout. It is able to provide low conduction and switching losses, which maximize the efficiency of high-frequency motor control applications with short circuit withstand capability.



STGB3NB60KDT4 Features


Advanced proprietary trench gate and field stop structure

Low conduction and switching losses

Positive VCE(sat) temperature coefficient

Very tight parameter distribution

Package: D2PAK



STGB3NB60KDT4 Applications


High-frequency motor control

SMPS and PFC in both hard switching and resonant topologies


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